IEEE Transactions on Electron Devices

SJR Rank #6,790H-index: 221SJR: 0.809Best quartile: Q1APC: US$2,645

Journal website: aims, scope and author guidelines

Publisher

Institute of Electrical and Electronics Engineers Inc.

Country

United States

Type

journal

SJR by Edition

Subject Categories

Electrical and Electronic EngineeringQ1
Electronic, Optical and Magnetic MaterialsQ2

Areas: Engineering · Materials Science

Most published research topics

Semiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit DesignSilicon Carbide Semiconductor TechnologiesSemiconductor Quantum Structures and DevicesFerroelectric and Negative Capacitance DevicesThin-Film Transistor TechnologiesGaN-based semiconductor devices and materialsIntegrated Circuits and Semiconductor Failure AnalysisSemiconductor materials and interfacesAdvanced Memory and Neural Computing

Source: OpenAlex

Publication Statistics

Documents per Year

Detailed Information

ISSN

0018-9383, 1557-9646

SJR Best Quartile

Region

Northern America

Citations per Document (2 years)

3.74

References per Document

32.16

Coverage

1963-2026

Scope

IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.

Metrics from SCImago Journal Rank 2025. View on SCImago