IEEE Electron Device Letters

SJR Rank #4,259H-index: 184SJR: 1.087Best quartile: Q1APC: US$2,645

Journal website: aims, scope and author guidelines

Publisher

Institute of Electrical and Electronics Engineers Inc.

Country

United States

Type

journal

SJR by Edition

Subject Categories

Electrical and Electronic EngineeringQ1
Electronic, Optical and Magnetic MaterialsQ1

Areas: Engineering · Materials Science

Most published research topics

Semiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit DesignFerroelectric and Negative Capacitance DevicesThin-Film Transistor TechnologiesGaN-based semiconductor devices and materialsAdvanced Memory and Neural ComputingSilicon Carbide Semiconductor TechnologiesSemiconductor Quantum Structures and DevicesIntegrated Circuits and Semiconductor Failure AnalysisSemiconductor materials and interfaces

Source: OpenAlex

Publication Statistics

Documents per Year

Detailed Information

ISSN

0741-3106, 1558-0563

SJR Best Quartile

Region

Northern America

Citations per Document (2 years)

4.65

References per Document

24.77

Coverage

1980-2026

Scope

IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.

Metrics from SCImago Journal Rank 2025. View on SCImago